power transistor
英 [ˈpaʊə(r) trænˈzɪstə(r)]
美 [ˈpaʊər trænˈzɪstər]
晶体功率管；功率晶体管
双语例句
- The diameter, length, arch height and space of bond-wires have great impacts on the radio frequency performance of RF power transistor.
键合线的直径、长度、拱高和并列键合线间距等物理参量，均对器件性能有很大影响。 - Study of Double-line Breakdown Phenomenon for Power Transistor with SIPOS Passivation Layer
异质结双极型晶体管SIPOS钝化功率晶体管双线击穿现象的研究 - Study of Electric Ray Annealing on High Power Transistor Chip
低频大功率晶体管芯片的电子束退火研究 - Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.
金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。 - Design of Microwave Power Transistor Amplifier's Match Circuit
微波功率晶体管放大器匹配电路的设计 - Study on the Parameter Degradation of Silicon Microwave Pulsed Power Transistor
硅脉冲双极型微波功率管参数退化探索 - Control Scheme and Implement of CVCF Power Transistor Inverter
恒压恒频功率晶体管逆变器的控制及实现 - In order to make impedance matching well, use ADS software to optimize the matching network again, make it's impedance approach power transistor's actual output impedance.
为实现更好的阻抗匹配，再用ADS优化匹配网络，使其阻抗值更接近功率晶体管的实际输出阻抗值。 - The Test System For Thermal Resistance Of Power Transistor base on Virtual Instrument
基于虚拟仪器的功率三极管热阻测试系统 - Abstract: In this paper, the failure analysis of a type of high frequency power transistor is introduced.
介绍了对某型号高频大功率晶体管进行的失效分析。 - Field-effect HF power transistor
场效应高频功率晶体管 - Parameters Extraction of Power Transistor Based on Load-Pull Measurement System
基于负载牵引测试系统的功率管参数提取 - Production of Au multi-layer Metallization System to be used in Microwave Power Transistor in Silicon
硅微波功率晶体管中用的金多层金属化系统的制备 - Power transistor base drive circuit
功率晶体管基极驱动电路 - In this paper, the quality problem of internal matching capacitor in S-band high power transistor is analyzed. The improving method is given. The stability and reliability of internal matching high power transistor are improved.
对影响S波段大功率晶体管内匹配电容的质量问题进行了分析，并给出了改进方法，提高了内匹配大功率晶体管的稳定性和可靠性。 - Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor.
介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用（积木式）的方法。 - Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。 - It will be a valuable reference to microwave pulse power transistor design.
为微波脉冲功率晶体管的设计提供了育价值的参考。 - Made a research in the new technical fruit and future prospect of currently technology of high-frequency power transistor.
对当前高频大功率晶体管制造技术的最新科技成果和未来发展方向进行了研究。 - This paper introduces an optimum design method for Darlington power transistor structure consisting of VDMOS and bipolar transistor and technological parameters. Also, the design model is established.
提出了VDMOS和双极晶体管复合而成的达林顿功率晶体管结构和工艺参数的优化设计方法，建立了设计模型。 - A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。 - In the design procedure, I am responsible for the design and simulation of reference voltage element and oscillator; I have also analyzed and simulated the mode select device, error comparator, logic circuit, protect circuit and power transistor conscientiously.
设计中，本人主要担负基准电压源、振荡器的设计和仿真，对模式选择、误差比较器、逻辑电路、保护电路、功率管也做了细致的分析和仿真； - The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。 - In this paper the designing principle and the technical characters of a broadband microwave power transistor amplifier for the solar radio fast recording system at Yunnan observatory are described. The circuit schemes and the initial results measured for the amplifier are included.
本文介绍了云南天文台微带功率晶体管放大器在太阳射电快速记录系统中的设计原理和技术性能，并给出了放大器的线路图和最初的测量结果。 - This paper reviews the key semiconductor technology for solid state radar, included T/ R modules, solid state transmitter and microwave power transistor, and VHSIC.
对雷达固态化中的关键半导体技术T/R模块、固态发射机和微波功率晶体管及VHSIC等三方面进行了论述。 - VDMOS FET power transistor has the features of MOS FET and bipolar transistor.
VDMOS场效应功率晶体管具有双极型和一般MOS器件的优点。 - Equivalents between characteristics of power transistor are studied.
研究了功率晶体管特性的等效关系； - This paper presents the experimental results of a silicon pulsed power transistor with self-aligned T-shaped electrode structure.
报道了一种自对准T形电极结构的硅脉冲功率晶体管实验结果。 - In the design of bias circuit, using the method of resistor compensation to compensate the work state of RF power transistor which is affected by the variations of temperature and bias voltage.
在偏置电路的设计中，采用了电阻补偿的方法，对温度和偏置电压的变化对射频功率晶体管工作状态的影响进行了补偿。 - So the paper mainly research the fault diagnosis and locating of the power transistor of inverter.
所以在研究中主要是对逆变器的功率半导体器件进行故障诊断分析和定位。